FDC6301N.
SearchONSEMI - FDC6301N. - Dual-MOSFET, n-Kanal, 25 V, 25 V, 220 mA, 220 mA, 4 ohm
Lifecycle: Inactive Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Country of origin: PHRoHS Compliant

Farnell
Supply Risk Summary
Supply chain risk trend is available on Pro and Enterprise plans.
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Availability
0of 1 suppliers
No lead time data
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
| 0 | 113 days | — | Minimum order quantity 3,000 | — | No Stock |
Supplier Part Details
Technical Attributes
Anzahl der Pins6Pin(s)
Bauform - TransistorSuperSOT
Betriebstemperatur, max.150°C
Dauer-Drainstrom Id, n-Kanal220mA
Dauer-Drainstrom Id, p-Kanal220mA
Drain-Source-Durchgangswiderstand, n-Kanal4ohm
Drain-Source-Durchgangswiderstand, p-Kanal4ohm
Drain-Source-Spannung Vds, n-Kanal25V
Drain-Source-Spannung Vds, p-Kanal25V
euEccnNLR
hazardousfalse
isCanonicalY
Kanaltypn-Kanal
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
Produktpalette-
Qualifikation-
rohsPhthalatesCompliantYES
usEccnEAR99
Verlustleistung, n-Kanal900mW
Verlustleistung, p-Kanal900mW