Bipolar (BJT) Transistor NPN 50V 150mA 100MHz 300mW Through Hole TO-92S
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantBipolar (BJT)
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1,080
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1of 1 suppliers
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 1,080 | — | — | Minimum order quantity 20Order multiple 1,000 | Bag-packed | In Stock |
Supplier Part Details
Technical Attributes
Collector - Emitter Voltage VCEO50V
Current - Collector Cutoff100nA
Current - Collector(Ic)150mA
DC Current Gain560
Emitter-Base Voltage VEBO7V
Number1 NPN
Operating Temperature-55℃~+150℃
Pd - Power Dissipation300mW
Transition frequency(fT)100MHz
typeNPN
Vce Saturation(VCE(sat))400mV