Infineon Technologies N channel HEXFET power MOSFET, 100 V, 9.7 A, TO-220, IRF520NPBF
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: CNRoHS CompliantMOSFETs
Bürklin
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1,354
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1of 1 suppliers
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| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 1,354 | — | — | Minimum order quantity 1 | piece(s) | In Stock |
Supplier Part Details
Technical Attributes
AssemblyTHT
drain-source on resistance RDS (on) max @VGS=10V200Ω
EnclosureTO-220
Gate Charge Qg @10V (nC)0C
Max. current9.7A
max. operating temperature175°C
max. Voltage100V
min. operating temperature-55°C
Power loss48W
SeriesIRF
VersionN channel