Infineon Technologies N channel HEXFET power MOSFET, 200 V, 18 A, TO-220, IRF640NPBF
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: CNRoHS CompliantMOSFETs
Bürklin
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| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 2,853 | — | — | Minimum order quantity 1 | piece(s) | In Stock |
Supplier Part Details
Technical Attributes
AssemblyTHT
drain-source on resistance RDS (on) max @VGS=10V150Ω
EnclosureTO-220
Gate Charge Qg @10V (nC)0C
Max. current18A
max. operating temperature175°C
max. Voltage200V
min. operating temperature-55°C
Power loss150W
SeriesIRF
VersionN channel