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DFE252012P-3R3M=P2.

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by Murata Manufacturing

MURATA - DFE252012P-3R3M=P2. - Leistungsinduktivität (SMD), 3.3 µH, Geschirmt, 2 A, DFE252012P Series, 1008 [Metrisch 2520]

Lifecycle: Inactive Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Country of origin: CNRoHS Compliant
DFE252012P-3R3M=P2.
Farnell

Supply Risk Summary

Supply chain risk trend is available on Pro and Enterprise plans.
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Inactive

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Confirmed Stock
0
Not in stock
Best Unit Price
—
Availability
0of 1 suppliers
No lead time data

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Farnell
Farnell
0112 days—
Minimum order quantity 3,000
—No Stock

Supplier Part Details

Supplier DescriptionRoHSLife CycleCountryTariff CodeLinks
Farnell
Farnell
2530075
MURATA - DFE252012P-3R3M=P2. - Leistungsinduktivität (SMD), 3.3 µH, Geschirmt, 2 A, DFE252012P Series, 1008 [Metrisch 2520]YesInactiveCN85045000 (EU CN)

Technical Attributes

Farnell
Farnell
Bauart der InduktivitätGeschirmt
Bauform - Leistungsinduktivität1008 [Metrisch 2520]
Bauform/Gehäuse der Induktivität1008 [Metrisch 2520]
DC-Widerstand, max.0.14ohm
euEccnNLR
hazardousfalse
Induktivität3.3µH
Induktivitätstoleranz± 20%
isCanonicalY
productTraceabilityNo
Produktbreite2mm
Produkthöhe1.2mm
Produktlänge2.5mm
ProduktpaletteDFE252012P Series
RMS-Strom Irms-
rohsPhthalatesCompliantYES
Sättigungsstrom (Isat)2A
usEccnEAR99