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by Alliance Memory

128Mb (8M x 16) 8Mx16 3V 62mA 3.6V 166MHz Parallel 16bit TFBGA-54

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: TWRoHS Compliant MSL MSL 3
AS4C8M16SA-6BIN
Farnell(1/4)

Supply Risk Summary

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Confirmed Stock
3,693
5 of 10 suppliers stocked
Best Unit Price
—
Availability
5of 10 suppliers
Fastest delivery: 120 days
Shortest factory lead: 8 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Digi-Key
Digi-Key
1450-1264-ND
1,935—16 weeks
Minimum order quantity 1
TrayIn Stock
Winsource
Winsource
763——
Minimum order quantity 2
—In Stock
Future Electronics
Future Electronics
696—16 weeks
Minimum order quantity 348Order multiple 348
TRAYIn Stock
Future Electronics
Future Electronics
0—8 weeks
Minimum order quantity 348Order multiple 348
—No Stock
Farnell
Farnell
164120 days—
Minimum order quantity 1
—In Stock
Mouser
Mouser
135—16 weeks
Minimum order quantity 1
TrayIn Stock
Avnet Silica
Avnet Silica
AIAAS4C8M16SA6BIN
063 days—
Minimum order quantity 348Order multiple 348
—No Stock
Avnet Silica
Avnet Silica
AS4C8M16SA-6BIN
0114 days—
Minimum order quantity 348Order multiple 348
—No Stock
LCSC
LCSC
0——
Minimum order quantity 1
TrayNo Stock
TME
TME
0——
Minimum order quantity 348
—No Stock

Supplier Part Details

Supplier DescriptionRoHSMSLLife CycleSVHCCategoryCountryWeightTariff CodePackagingLinks
Digi-Key
Digi-Key
1450-1264-ND
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TFBGA (8x8)—MSL 3Active—Integrated Circuits (ICs)——8542.32.0002 (US HTS)Tray
TME
TME
AS4C8M16SA-6BIN
IC: DRAM Speicher; 128MbDRAM; 2Mx16bitx4; 3,3V; 166MHz; 5,4ns; Tray——Hardly Available—DRAM Speicher - Integrierte Schaltungen————
Farnell
Farnell
4260940
ALLIANCE MEMORY - AS4C8M16SA-6BIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s)Yes—ActiveNo SVHC (04-Feb-2026)—TW—85423231 (EU CN)—
Future Electronics
Future Electronics
AS4C8M16SA-6BIN
AS4C8M16SA Series 128 M (8 M x 16) 3.3 V 166 MHz SMT CMOS SDRAM - TFBGA-54Yes—Active—component dram—1.251773 g—TRAY
Avnet Silica
Avnet Silica
AIAAS4C8M16SA6BIN
FBGA 54/I°/128M - 8M x 16 bit Synchronous DRAM (SDRAM)Yes————————
LCSC
LCSC
C1348897
128Mbit 166MHz TFBGA-54(8x8) Memory RoHSYes———SDRAM—0.000001 g—Tray
Avnet Silica
Avnet Silica
AS4C8M16SA-6BIN
FBGA 54/I°/128M - 8M x 16 bit Synchronous DRAM (SDRAM)Yes————————
Winsource
Winsource
AS4C8M16SA-6BIN
IC DRAM 128MBIT PAR 54TFBGAYes————————
Mouser
Mouser
913-4C8M16SA-6BIN
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Industrial Temp - TrayYes———DRAM——8542329010Tray
Future Electronics
Future Electronics
1088645
AS4C8M16SA Series 128 M (8 M x 16) 3.3 V 166 MHz SMT CMOS SDRAM - TFBGA-54Yes—Active—component dram—1.251773 g——

Technical Attributes

Anzahl der Pins54Pin(s)
Betriebstemperatur, max.85°C
Betriebstemperatur, min.-40°C
DRAM-AusführungSDRAM
euEccnNLR
hazardousfalse
IC-Gehäuse / BauformTFBGA
IC-MontageOberflächenmontage
isCanonicalY
MSLMSL 3 - 168 Stunden
productTraceabilityNo
Produktpalette-
rohsPhthalatesCompliantYES
Speicherdichte128Mbit
Speicherkonfiguration8M x 16 Bit
Taktfrequenz, max.166MHz
usEccnEAR99
Versorgungsspannung, nom.3.3V