Skip to content

Resources

Docs

Account

AS4C32M16SB-7BIN

Search

by Alliance Memory

SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: TWRoHS Compliant MSL MSL 3
AS4C32M16SB-7BIN
Farnell(1/4)

Supply Risk Summary

Supply chain risk trend is available on Pro and Enterprise plans.
Multi-source
Active

Sign in to view detailed supply risk factors and indicators.

View Plans
Confirmed Stock
916
6 of 8 suppliers stocked
Best Unit Price
—
Availability
6of 8 suppliers
Fastest delivery: 70 days
Shortest factory lead: 8 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Farnell
Farnell
49070 days—
Minimum order quantity 1
—In Stock
Future Electronics
Future Electronics
318—8 weeks
Minimum order quantity 318Order multiple 348
TRAYIn Stock
Winsource
Winsource
64——
Minimum order quantity 2
—In Stock
Digi-Key
Digi-Key
22—8 weeks
Minimum order quantity 1Order multiple 348
TrayIn Stock
Mouser
Mouser
16—8 weeks
Minimum order quantity 1Order multiple 348
TrayIn Stock
LCSC
LCSC
6——
Minimum order quantity 1Order multiple 348
TrayIn Stock
Avnet Silica
Avnet Silica
AS4C32M16SB-7BIN
063 days—
Minimum order quantity 348Order multiple 348
—No Stock
TME
TME
0——
Minimum order quantity 348
—No Stock

Supplier Part Details

Supplier DescriptionRoHSMSLLife CycleSVHCCategoryCountryWeightTariff CodePackagingLinks
Avnet Silica
Avnet Silica
AS4C32M16SB-7BIN
INDUSTRIAL (-40 ~ 85°C)/Yes————————
Digi-Key
Digi-Key
1450-AS4C32M16SB-7BIN-ND
SDRAM Memory IC 512Mbit Parallel 143 MHz 6 ns 54-FBGA (8x8)—MSL 3Active—Integrated Circuits (ICs)——8542.32.0028 (US HTS)Tray
Farnell
Farnell
4260954
ALLIANCE MEMORY - AS4C32M16SB-7BIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 143 MHz, FBGA, 54 Pin(s)Yes—ActiveNo SVHC (27-Jun-2024)—TW—85423231 (EU CN)—
LCSC
LCSC
C17334765
3V~3.6V 512Mbit 143MHz FBGA-54(8x8) Memory (ICs) RoHSYes———SDRAM—0.000717 g—Tray
Winsource
Winsource
AS4C32M16SB-7BIN
IC DRAM 512MBIT PAR 54FBGAYes————————
Mouser
Mouser
913-AS4C32M16SB-7BIN
DRAM SDR, 512Mb, 32M x 16, 3.3V, 54-ball FBGA, 143MHz, Industrial Temp, B DieYes———DRAM—0.025293 g8542329010Tray
Future Electronics
Future Electronics
AS4C32M16SB-7BIN
512Mb (32Mbx16) SDRAM 3.3V 143MHz 54-ball FBGA Industrial (-40 ~ 85°C)Yes—Active—component dram—1.091954 g—TRAY
TME
TME
AS4C32M16SB-7BIN
IC: DRAM Speicher; 512MbDRAM; 8Mx16bitx4; 3,3V; 143MHz; 5,4ns; Tray——Hardly Available—DRAM Speicher - Integrierte Schaltungen————

Technical Attributes

Anzahl der Pins54Pin(s)
Betriebstemperatur, max.85°C
Betriebstemperatur, min.-40°C
DRAM-AusführungSDRAM
euEccnNLR
hazardousfalse
IC-Gehäuse / BauformFBGA
IC-MontageOberflächenmontage
isCanonicalY
MSLMSL 3 - 168 Stunden
productTraceabilityNo
Produktpalette-
rohsPhthalatesCompliantYES
Speicherdichte512Mbit
Speicherkonfiguration32M x 16 Bit
Taktfrequenz, max.143MHz
usEccnEAR99
Versorgungsspannung, nom.3.3V