Skip to content

Resources

Docs

Account

AS4C512M16D4A-62BCN

Search

by Alliance Memory

SDRAM - DDR4 Memory IC 8Gbit POD 1.6 GHz 18 ns 96-FBGA (7.5x13)

Lifecycle: EOL Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: TWRoHS Compliant MSL MSL 3
AS4C512M16D4A-62BCN
Farnell(1/3)

Supply Risk Summary

Supply chain risk trend is available on Pro and Enterprise plans.
Multi-source
EOL

Sign in to view detailed supply risk factors and indicators.

View Plans
Confirmed Stock
901
4 of 6 suppliers stocked
Best Unit Price
—
Availability
4of 6 suppliers
Fastest delivery: 91 days
Shortest factory lead: 12 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Digi-Key
Digi-Key
764—12 weeks
Minimum order quantity 1Order multiple 209
TrayIn Stock
Farnell
Farnell
120154 days—
Minimum order quantity 1
—In Stock
Avnet Silica
Avnet Silica
AS4C512M16D4A-62BCN
991 days—
Minimum order quantity 2,090Order multiple 2,090
—In Stock
Mouser
Mouser
8—12 weeks
Minimum order quantity 1Order multiple 209
TrayIn Stock
RS
RS
0——
Minimum order quantity 198
PUNo Stock
TME
TME
0——
Minimum order quantity 198
—No Stock

Supplier Part Details

Supplier DescriptionRoHSMSLLife CycleSVHCCategoryCountryTariff CodePackagingLinks
Digi-Key
Digi-Key
1450-AS4C512M16D4A-62BCN-ND
SDRAM - DDR4 Memory IC 8Gbit POD 1.6 GHz 18 ns 96-FBGA (7.5x13)—MSL 3EOL—Integrated Circuits (ICs)—8542.32.0036 (US HTS)Tray
Farnell
Farnell
4729650
ALLIANCE MEMORY - AS4C512M16D4A-62BCN - DRAM, DDR4, 8 Gbit, 512M x 16 Bit, 1.6 GHz, FBGA, 96 Pin(s)Yes—ObsoleteNo SVHC (21-Jan-2025)—TW85423231 (EU CN)—
RS
RS
425196
Alliance Memory SDRAM 8GB 512M x 16 DDR4 3200Mbit/s 96-Ball FBGA 96-Pin———————PU
Avnet Silica
Avnet Silica
AS4C512M16D4A-62BCN
FBGA-96/0°C to 95°C/ DDR4 Synchronous DRAM 512M x 16 1600 MHzYes———————
Mouser
Mouser
913-AS4C52M16D4A2BCN
DRAM DDR4, 8Gb, 512M x 16, 1.2V, 96-ball FBGA, 1600Mhz, Commercial Temp Rev.A - TrayYes—EOL—DRAM—8542320023Tray
TME
TME
AS4C512M16D4A62BCN
IC: DRAM Speicher; 8GbSDRAM; 512Mx16bit; 1,6GHz; FBGA96; 0÷95°C——Hardly Available—DRAM Speicher - Integrierte Schaltungen———

Technical Attributes

Anzahl der Pins96Pin(s)
Betriebstemperatur, max.95°C
Betriebstemperatur, min.0°C
DRAM-AusführungDDR4
euEccnNLR
hazardousfalse
IC-Gehäuse / BauformFBGA
IC-MontageOberflächenmontage
isCanonicalY
productTraceabilityNo
Produktpalette-
rohsPhthalatesCompliantYES
Speicherdichte8Gbit
Speicherkonfiguration512M x 16 Bit
Taktfrequenz, max.1.6GHz
usEccnEAR99
Versorgungsspannung, nom.1.2V