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N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount D2PAK

Lifecycle: NRND Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
IRFS4310ZTRLPBF
Digi-Key(1/3)

Supply Risk Summary

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NRND

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Confirmed Stock
24,339
4 of 7 suppliers stocked
Best Unit Price
—
Availability
4of 7 suppliers
Fastest delivery: 896 days
Shortest factory lead: 12 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
A
Avnet
IRFIRFS4310ZTRLPBF
12,800896 days—
Minimum order quantity 800Order multiple 800
—In Stock
Digi-Key
Digi-Key
3,444—18 weeks
Minimum order quantity 1
Cut Tape (CT)In Stock
Digi-Key
Digi-Key
3,444—18 weeks
Minimum order quantity 1
Digi-Reel®In Stock
Digi-Key
Digi-Key
3,200—18 weeks
Minimum order quantity 800Order multiple 800
Tape & Reel (TR)In Stock
Mouser
Mouser
795—12 weeks
Minimum order quantity 1Order multiple 800
Reel, Cut Tape, MouseReelIn Stock
RS
RS
328——
Minimum order quantity 4Order multiple 4
—In Stock
RS
RS
328——
Minimum order quantity 4Order multiple 4
—In Stock

Supplier Part Details

Supplier DescriptionLife CyclePackagingLinks
A
Avnet
IRFIRFS4310ZTRLPBF
MOSFET, 100V, 127A, 6 mOhm, 120 nC Qg, D2-Pak——
Digi-Key
Digi-Key
IRFS4310ZTRLPBFTR-ND
N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount D2PAK—Tape & Reel (TR)
Digi-Key
Digi-Key
IRFS4310ZTRLPBFCT-ND
N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount D2PAK—Cut Tape (CT)
Digi-Key
Digi-Key
IRFS4310ZTRLPBFDKR-ND
N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount D2PAK—Digi-Reel®
RS
RS
9155045
Infineon HEXFET N-Kanal, SMD MOSFET 100 V / 127 A 250 W, 3-Pin D2PAK (TO-263)——
RS
RS
9155045P
Infineon HEXFET N-Kanal, SMD MOSFET 100 V / 127 A 250 W, 3-Pin D2PAK (TO-263)——
Mouser
Mouser
942-IRFS4310ZTRLPBF
MOSFETs MOSFT 100V 127A 6mOhm 120nC QgNRNDReel, Cut Tape, MouseReel

Technical Attributes

Current - Continuous Drain (Id) @ 25°C120A (Tc)
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drain to Source Voltage (Vdss)100 V
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET Feature-
FET TypeN-Channel
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Grade-
Grade-
Input Capacitance (Ciss) (Max) @ Vds6860 pF @ 50 V
Input Capacitance (Ciss) (Max) @ Vds6860 pF @ 50 V
Mounting TypeSurface Mount
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Operating Temperature-55°C ~ 175°C (TJ)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max)250W (Tc)
Power Dissipation (Max)250W (Tc)
Qualification-
Qualification-
Rds On (Max) @ Id, Vgs6mOhm @ 75A, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 75A, 10V
Supplier Device PackageD2PAK
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 150µA
Vgs(th) (Max) @ Id4V @ 150µA