1.2kV 55A 4V 285W 36mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs
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Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantSilicon Carbide Field Effect Transistor (MOSFET)
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 0 | — | — | Minimum order quantity 1Order multiple 500 | Tape & Reel (TR) | No Stock |
Supplier Part Details
Technical Attributes
Current - Continuous Drain(Id)55A
Drain to Source Voltage1.2kV
Gate Charge(Qg)137nC
Gate Threshold Voltage (Vgs(th))4V
Input Capacitance(Ciss)2.633nF
Number1 N-channel
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)189pF
Pd - Power Dissipation285W
RDS(on)36mΩ
Reverse Transfer Capacitance (Crss@Vds)16.7pF
TypeN-Channel