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by ROHM

ROHM - BSS84XHZGG2CR - Leistungs-MOSFET, p-Kanal, 60 V, 230 mA, 5.3 ohm, DFN1010, Oberflächenmontage

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: JPRoHS CompliantMOSFETs
BSS84XHZGG2CR
Farnell(1/2)

Supply Risk Summary

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Availability incomplete
Best Unit Price
—
Availability
0of 3 suppliers
Shortest factory lead: 17 weeks

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Farnell
Farnell
0148 days—
Minimum order quantity 5
—No Stock
Farnell
Farnell
0148 days—
Minimum order quantity 100
—No Stock
Mouser
Mouser
Unknown—17 weeks
Minimum order quantity 1
Reel, Cut TapeUnknown

Supplier Part Details

Supplier DescriptionRoHSLife CycleSVHCCategoryCountryTariff CodePackagingLinks
Farnell
Farnell
3586497RL
ROHM - BSS84XHZGG2CR - Leistungs-MOSFET, p-Kanal, 60 V, 230 mA, 5.3 ohm, DFN1010, OberflächenmontageYesActiveNo SVHC (25-Jun-2025)—JP85412900 (EU CN)—
Farnell
Farnell
3586497
ROHM - BSS84XHZGG2CR - Leistungs-MOSFET, p-Kanal, 60 V, 230 mA, 5.3 ohm, DFN1010, OberflächenmontageYesActiveNo SVHC (25-Jun-2025)—JP85412900 (EU CN)—
Mouser
Mouser
755-BSS84XHZGG2CR
MOSFETs Transistor, MOSFET Pch -60V -0.23A, DriveVoltage:-4.5 DFN10103WYes——MOSFETs—8541290000Reel, Cut Tape

Technical Attributes

Anzahl der Pins3Pin(s)
Bauform - TransistorDFN1010
Betriebstemperatur, max.150°C
Betriebswiderstand, Rds(on)2.8ohm
Dauer-Drainstrom Id230mA
Drain-Source-Durchgangswiderstand5.3ohm
Drain-Source-Spannung Vds60V
euEccnNLR
Gate-Source-Schwellenspannung, max.2.5V
hazardousfalse
isCanonicalN
Kanaltypp-Kanal
productTraceabilityNo
Produktpalette-
QualifikationAEC-Q101
Qualifizierungsstandard der AutomobilindustrieAEC-Q101
Rds(on)-Prüfspannung10V
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
usEccnEAR99
Verlustleistung1W
Verlustleistung Pd1W
Wandlerpolaritätp-Kanal