FDN5618P
Searchonsemi PMOS PowerTrench, Vds=60 V, 1.25 A, SOT-23, , 3
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)

Farnell
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View PlansConfirmed Stock
486,090
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Best Unit Price
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Availability
1of 3 suppliers
Fastest delivery: 154 days
Stock by Supplier
Stock & Availability
Supplier Part Details
| Supplier | Description | Links |
|---|---|---|
Farnell 9846344 | ONSEMI - FDN5618P - Leistungs-MOSFET, p-Kanal, 60 V, 1.25 A, 0.17 ohm, SuperSOT, Oberflächenmontage | |
Farnell 2352452 | ONSEMI - FDN5618P - Leistungs-MOSFET, p-Kanal, 60 V, 1.2 A, 0.17 ohm, SuperSOT, Oberflächenmontage | |
Farnell 9846344RL | ONSEMI - FDN5618P - Leistungs-MOSFET, p-Kanal, 60 V, 1.25 A, 0.17 ohm, SuperSOT, Oberflächenmontage |
Technical Attributes
Anzahl der Pins3Pin(s)
Anzahl der Pins3Pin(s)
Bauform - TransistorSuperSOT
Bauform - TransistorSuperSOT
Betriebstemperatur, max.150°C
Betriebstemperatur, max.150°C
Dauer-Drainstrom Id1.25A
Dauer-Drainstrom Id1.25A
Drain-Source-Durchgangswiderstand0.17ohm
Drain-Source-Durchgangswiderstand0.17ohm
Drain-Source-Spannung Vds60V
Drain-Source-Spannung Vds60V
euEccnNLR
euEccnNLR
Gate-Source-Schwellenspannung, max.1.6V
Gate-Source-Schwellenspannung, max.1.6V
hazardousfalse
hazardousfalse
Kanaltypp-Kanal
Kanaltypp-Kanal
MSL-
MSL-
productTraceabilityYes-Date/Lot Code
productTraceabilityYes-Date/Lot Code
Produktpalette-
Produktpalette-
Qualifikation-
Qualifikation-
Rds(on)-Prüfspannung10V
Rds(on)-Prüfspannung10V
rohsPhthalatesCompliantYES
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
TransistormontageOberflächenmontage
usEccnEAR99
usEccnEAR99
Verlustleistung500mW
Verlustleistung500mW