Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantBipolar (BJT)
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1,160
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1of 1 suppliers
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 1,160 | — | — | Minimum order quantity 20Order multiple 4,000 | Tape & Reel (TR) | In Stock |
Supplier Part Details
Technical Attributes
Collector - Emitter Voltage VCEO160V
Current - Collector Cutoff50nA
Current - Collector(Ic)600mA
DC Current Gain80
Emitter-Base Voltage VEBO6V
Number1 NPN
Operating Temperature-
Pd - Power Dissipation625mW
Transition frequency(fT)100MHz
typeNPN
Vce Saturation(VCE(sat))200mV