INFINEON - IRF3415STRLPBF - Leistungs-MOSFET, n-Kanal, 150 V, 43 A, 0.042 ohm, TO-263AB, Oberflächenmontage
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Farnell(1/3)
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View PlansConfirmed Stock
16,366
4 of 8 suppliers stocked
Best Unit Price
—
Availability
4of 8 suppliers
Fastest delivery: 938 days
Shortest factory lead: 26 weeks
Stock by Supplier
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 5,968 | — | 26 weeks | Minimum order quantity 1Order multiple 800 | Reel, Cut Tape, MouseReel | In Stock | |
 | 4,800 | — | 26 weeks | Minimum order quantity 800Order multiple 800 | — | In Stock | |
| 1,600 | — | 26 weeks | Minimum order quantity 800Order multiple 800 | — | In Stock | |
 | 1,374 | 938 days | — | Minimum order quantity 1 | — | In Stock | |
| 1,374 | 938 days | — | Minimum order quantity 100 | — | In Stock | |
| 0 | 938 days | — | Minimum order quantity 800 | — | No Stock | |
 | IRF3415SPBF-GURT | 1,250 | — | — | Minimum order quantity 10Order multiple 10 | — | In Stock |
 | 0 | 196 days | — | Minimum order quantity 800Order multiple 800 | REEL | No Stock |
Supplier Part Details
| Supplier | Description | Life Cycle | Packaging | Links |
|---|---|---|---|---|
Farnell 2725885RL | INFINEON - IRF3415STRLPBF - Leistungs-MOSFET, n-Kanal, 150 V, 43 A, 0.042 ohm, TO-263AB, Oberflächenmontage | — | — | |
Farnell 2725885 | INFINEON - IRF3415STRLPBF - Leistungs-MOSFET, n-Kanal, 150 V, 43 A, 0.042 ohm, TO-263AB, Oberflächenmontage | — | — | |
Farnell 4319095 | INFINEON - IRF3415STRLPBF - Leistungs-MOSFET, n-Kanal, 150 V, 43 A, 0.042 ohm, TO-263AB, Oberflächenmontage | — | — | |
Mouser 942-IRF3415STRLPBF | MOSFETs MOSFT 150V 43A 42mOhm 133.3nC | — | Reel, Cut Tape, MouseReel | |
Rutronik TMOSP11761 | N-CH 150V 43A 42mOhm D2PAK | — | REEL | |
Schukat IRF3415SPBF-GURT | N-Ch 150V 43A 200W 0,042R D²Pak | — | — | |
Future Electronics 2173916 | Single N-Channel 150 V 0.042 Ohm 200 nC HEXFET® Power Mosfet - D2PAK | Active | — | |
Future Electronics 5585294 | Single N-Channel 150 V 0.042 Ohm 200 nC HEXFET® Power Mosfet - D2PAK | Active | — |
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorTO-263AB
Betriebstemperatur, max.175°C
Dauer-Drainstrom Id43A
Drain-Source-Durchgangswiderstand0.042ohm
Drain-Source-Spannung Vds150V
euEccnNLR
Gate-Source-Schwellenspannung, max.4V
hazardousfalse
Kanaltypn-Kanal
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
ProduktpaletteHEXFET
Qualifikation-
Rds(on)-Prüfspannung10V
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
usEccnEAR99
Verlustleistung200W