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by Infineon

Single N-Channel 150 V 42 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: PHRoHS CompliantMOSFETs
IRF3415PBF
Farnell(1/4)

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Confirmed Stock
15,534
6 of 7 suppliers stocked
Best Unit Price
—
Availability
6of 7 suppliers
Fastest delivery: 196 days
Shortest factory lead: 26 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Future Electronics
Future Electronics
7,550—26 weeks
Minimum order quantity 50Order multiple 50
—In Stock
Future Electronics
Future Electronics
0—26 weeks
Minimum order quantity 1,000Order multiple 50
—No Stock
Mouser
Mouser
4,096—26 weeks
Minimum order quantity 1Order multiple 1,000
TubeIn Stock
Farnell
Farnell
1,698938 days—
Minimum order quantity 1
—In Stock
Rutronik
Rutronik
1,250196 days—
Minimum order quantity 50Order multiple 50
TUBEIn Stock
Bürklin
Bürklin
530——
Minimum order quantity 10
piece(s)In Stock
Schukat
Schukat
IRF3415PBF
410——
Minimum order quantity 10Order multiple 10
—In Stock

Supplier Part Details

Supplier DescriptionRoHSLife CycleSVHCCategoryCountryTariff CodePackagingLinks
Bürklin
Bürklin
31S3086
Infineon Technologies N channel HEXFET power MOSFET, 150 V, 43 A, TO-220, IRF3415PBFYesActiveYesMOSFETsPH85412900 (EU CN)piece(s)
Farnell
Farnell
8648093
INFINEON - IRF3415PBF - Leistungs-MOSFET, n-Kanal, 150 V, 37 A, 0.042 ohm, TO-220AB, Durchsteckmontage———————
Mouser
Mouser
942-IRF3415PBF
MOSFETs MOSFT 150V 43A 42mOhm 133.3nC——————Tube
Rutronik
Rutronik
TMOSP11759
N-CH 150V 43A 42mOhm TO220-3——————TUBE
Schukat
Schukat
IRF3415PBF
N-Ch 150V 43A 200W 0,042R TO220AB———————
Future Electronics
Future Electronics
6173915
Single N-Channel 150 V 42 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3—Active—————
Future Electronics
Future Electronics
6553093
Single N-Channel 150 V 42 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3—Active—————

Technical Attributes

AssemblyTHT
drain-source on resistance RDS (on) max @VGS=10V42Ω
EnclosureTO-220
Gate Charge Qg @10V (nC)0C
Max. current43A
max. operating temperature175°C
max. Voltage150V
min. operating temperature-55°C
Power loss200W
SeriesIRF
VersionN channel