MJD44H11G
SearchMJD Series 80 V 8 A NPN Complementary Power Transistor - TO-252
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Farnell(1/2)
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View PlansConfirmed Stock
38,206
2 of 3 suppliers stocked
Best Unit Price
—
Availability
2of 3 suppliers
Fastest delivery: 693 days
Shortest factory lead: 11 weeks
Stock by Supplier
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 15,406 | 693 days | — | Minimum order quantity 1 | — | In Stock | |
 | 14,925 | — | 11 weeks | Minimum order quantity 75Order multiple 75 | — | In Stock | |
| 7,875 | — | 11 weeks | Minimum order quantity 75Order multiple 75 | — | In Stock |
Supplier Part Details
| Supplier | Description | Life Cycle | Links |
|---|---|---|---|
Farnell 9557806 | ONSEMI - MJD44H11G - Bipolarer Einzeltransistor (BJT), Audio, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), Oberflächenmontage | — | |
Future Electronics 2190598 | MJD Series 80 V 8 A NPN Complementary Power Transistor - TO-252 | Active | |
Future Electronics 1735893 | MJD Series 80 V 8 A NPN Complementary Power Transistor - TO-252 | Active |
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorTO-252 (DPAK)
Betriebstemperatur, max.150°C
Dauerkollektorstrom8A
DC-Stromverstärkung (hFE), min.60hFE
euEccnNLR
hazardousfalse
Kollektor-Emitter-Spannung, max.80V
MSL-
productTraceabilityNo
Produktpalette-
QualifikationAEC-Q101
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
Übergangsfrequenz85MHz
usEccnEAR99
Verlustleistung20W
WandlerpolaritätNPN