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by ON Semiconductor

ONSEMI - MJD44H11-1G - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), Oberflächenmontage

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Datasheets:Datasheet (Farnell)
MJD44H11-1G
Farnell

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Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Farnell
Farnell
0742 days—
Minimum order quantity 1
—No Stock

Supplier Part Details

Supplier DescriptionLinks
Farnell
Farnell
2774791
ONSEMI - MJD44H11-1G - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), Oberflächenmontage

Technical Attributes

Farnell
Farnell
Anzahl der Pins3Pin(s)
Bauform - TransistorTO-252 (DPAK)
Betriebstemperatur, max.150°C
Dauerkollektorstrom8A
DC-Stromverstärkung (hFE), min.60hFE
euEccnNLR
hazardousfalse
Kollektor-Emitter-Spannung, max.80V
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
Produktpalette-
QualifikationAEC-Q101
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
Übergangsfrequenz85MHz
usEccnEAR99
Verlustleistung20W
WandlerpolaritätNPN