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AS4C32M16SB-6TIN

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by Alliance Memory

512Mbit 3V~3.6V 166MHz TSOP-54-10.2mm Memory (ICs) RoHS

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: TWRoHS Compliant MSL MSL 3
AS4C32M16SB-6TIN
Farnell(1/4)

Supply Risk Summary

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Confirmed Stock
9,768
5 of 8 suppliers stocked
Best Unit Price
—
Availability
5of 8 suppliers
Fastest delivery: 63 days
Shortest factory lead: 8 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Winsource
Winsource
7,456——
Minimum order quantity 6
—In Stock
Avnet Silica
Avnet Silica
AIAAS4C32M16SB6TIN
1,05263 days—
Minimum order quantity 108Order multiple 108
—In Stock
Avnet Silica
Avnet Silica
AS4C32M16SB-6TIN
1,05263 days—
Minimum order quantity 108Order multiple 108
—In Stock
Farnell
Farnell
7870 days—
Minimum order quantity 1
—In Stock
Digi-Key
Digi-Key
73—8 weeks
Minimum order quantity 1Order multiple 108
TrayIn Stock
Mouser
Mouser
57—8 weeks
Minimum order quantity 1Order multiple 108
TrayIn Stock
LCSC
LCSC
0——
Minimum order quantity 1Order multiple 108
TrayNo Stock
TME
TME
0——
Minimum order quantity 1
—No Stock

Supplier Part Details

Supplier DescriptionRoHSMSLLife CycleSVHCCategoryCountryWeightTariff CodePackagingLinks
Digi-Key
Digi-Key
1450-1481-ND
SDRAM Memory IC 512Mbit Parallel 166 MHz 5 ns 54-TSOP II—MSL 3Active—Integrated Circuits (ICs)——8542.32.0028 (US HTS)Tray
Farnell
Farnell
4729634
ALLIANCE MEMORY - AS4C32M16SB-6TIN - DRAM, SDRAM, 512 Mbit, 32M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)Yes—ActiveNo SVHC (21-Jan-2025)—TW—85423231 (EU CN)—
Avnet Silica
Avnet Silica
AIAAS4C32M16SB6TIN
INDUSTRIAL (-40 ~ 85°C)/TSOP 54/I°/IC SDRAM 512MBIT 166MHZYes————————
Avnet Silica
Avnet Silica
AS4C32M16SB-6TIN
INDUSTRIAL (-40 ~ 85°C)/TSOP 54/I°/IC SDRAM 512MBIT 166MHZYes————————
LCSC
LCSC
C1351095
512Mbit 3V~3.6V 166MHz TSOP-54-10.2mm Memory (ICs) RoHSYes———SDRAM—0.000001 g—Tray
Mouser
Mouser
913-AS4C32M16SB-6TIN
DRAM 512M 3.3V 133MHz 32M x 16 SDRAMYes———DRAM—0.012315 g8542329010Tray
Winsource
Winsource
AS4C32M16SB-6TIN
IC DRAM 512MBIT PAR 54TSOP II / SDRAM Memory IC 512Mb (32M x 16) Parallel 166 MHz 5 ns 54-TSOP IIYes————————
TME
TME
AS4C32M16SB-6TIN
IC: DRAM Speicher; 512MbDRAM; 8Mx16bitx4; 3,3V; 166MHz; 5ns; Tray——Blocked For Zbl Backorders—DRAM Speicher - Integrierte Schaltungen————

Technical Attributes

Anzahl der Pins54Pin(s)
Betriebstemperatur, max.85°C
Betriebstemperatur, min.-40°C
DRAM-AusführungSDRAM
euEccnNLR
hazardousfalse
IC-Gehäuse / BauformTSOP-II
IC-MontageOberflächenmontage
isCanonicalY
productTraceabilityNo
Produktpalette-
rohsPhthalatesCompliantYES
Speicherdichte512Mbit
Speicherkonfiguration32M x 16 Bit
Taktfrequenz, max.166MHz
usEccnEAR99
Versorgungsspannung, nom.3.3V