FGL60N100BNTDTU
SearchIGBT 1kV 60A 180W Through Hole TO-264-3
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantIGBT Transistors / Modules
Supply Risk Summary
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807
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1of 1 suppliers
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 807 | — | — | Minimum order quantity 1Order multiple 25 | Tube-packed | In Stock |
Supplier Part Details
Technical Attributes
Collector-Emitter Breakdown Voltage (Vces)1kV
Current - Collector(Ic)60A
Gate Charge(Qg)275nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@60mA
IGBT TypeNPT (Non-Punch Through)
Input Capacitance(Cies)6nF
Operating Temperature-55℃~+150℃@(Tj)
Output Capacitance(Coes)260pF
Pd - Power Dissipation180W
Reverse Recovery Time(trr)1.2us
Reverse Transfer Capacitance (Cres)200pF
Td(off)630ns
Td(on)140ns
Turn-On Energy (Eon)-
Vce Saturation(VCE(sat))2.9V@60A,15V