STGW30NC120HD
SearchN-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Future Electronics)
Country of origin: —RoHS Compliantmosfets
Future Electronics
Supply Risk Summary
Supply chain risk trend is available on Pro and Enterprise plans.
No supply
Active
Sign in to view detailed supply risk factors and indicators.
View PlansConfirmed Stock
0
Not in stock
Best Unit Price
—
Availability
0of 1 suppliers
Shortest factory lead: 14 weeks
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 0 | — | 14 weeks | Minimum order quantity 30Order multiple 30 | — | No Stock |
Supplier Part Details
Technical Attributes
ATS_ASIA0
ATS_EU0
ATS_NA0
availableRegionNA:EU:Asia:China
cooCN
eccnEAR99
hts_code8541.29.00.55
leadFreeY
ncnrFlagN
overview (en)<p><strong>The STGW30NC120HD is a N-channel very fast PowerMESH Insulated Gate Bipolar Transistor with outstanding performance.</strong> </p><p>The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.</p><p><strong>Features:</strong></p><ul> <li>Low on-losses </li> <li>Low on-voltage drop (Vcesat) </li> <li>High current capability </li> <li>High input impedance (voltage driven) </li> <li>Low gate charge </li> <li>Ideal for soft switching application</li></ul><p><strong>Applications:</strong></p><ul> <li>Induction heating</li></ul>
PBO_ASIA0
PBO_EU0
PBO_NA0
ship_to_rotaN/A
ship_to_usaN/A
tariffClassLL026
USATariff0