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by ON Semiconductor

N-Channel 1200 V 73 A 313 W Through Hole Silicon Carbide MOSFET - TO-247-4L

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: —RoHS Compliantsilicon carbide mosfets sic mosfets
NTH4L030N120M3S
Future Electronics

Supply Risk Summary

Supply chain risk trend is available on Pro and Enterprise plans.
No supply
Active

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Confirmed Stock
0
Not in stock
Best Unit Price
—
Availability
0of 2 suppliers
Shortest factory lead: 20 weeks

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Future Electronics
Future Electronics
0—20 weeks
Minimum order quantity 450Order multiple 450
—No Stock
Future Electronics
Future Electronics
0—20 weeks
Minimum order quantity 450Order multiple 450
—No Stock

Supplier Part Details

Supplier DescriptionRoHSLife CycleCategoryWeightLinks
Future Electronics
Future Electronics
2167116
N-Channel 1200 V 73 A 313 W Through Hole Silicon Carbide MOSFET - TO-247-4LYesActivesilicon carbide mosfets sic mosfets31.333333 g
Future Electronics
Future Electronics
3168487
N-Channel 1200 V 73 A 313 W Through Hole Silicon Carbide MOSFET - TO-247-4LYesActivesilicon carbide mosfets sic mosfets9.1 g

Technical Attributes

ATS_ASIA0
ATS_EU0
ATS_NA0
availableRegionNA:EU:Asia:China
dateCode2431
eccnEAR99
leadFreeY
ncnrFlagN
PBO_ASIA0
PBO_EU0
PBO_NA0
ship_to_rotaN/A
ship_to_usaN/A
tariffClassLL026
USATariff1