BC858BWT1G
SearchONSEMI - BC858BWT1G - Bipolarer Einzeltransistor (BJT), PNP, 30 V, 100 mA, 150 mW, SC-70, Oberflächenmontage
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Datasheets:Datasheet (Farnell)
Farnell
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View PlansConfirmed Stock
725
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Best Unit Price
—
Availability
1of 1 suppliers
Fastest delivery: 889 days
Stock by Supplier
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 725 | 889 days | — | Minimum order quantity 5 | — | In Stock |
Supplier Part Details
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorSC-70
Betriebstemperatur, max.150°C
Dauerkollektorstrom100mA
DC-Stromverstärkung (hFE), min.220hFE
euEccnNLR
hazardousfalse
Kollektor-Emitter-Spannung, max.30V
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
Produktpalette-
QualifikationAEC-Q101
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
Übergangsfrequenz100MHz
usEccnEAR99
Verlustleistung150mW
WandlerpolaritätPNP