Bipolar (BJT) Transistor PNP 40V 0.2A 250MHz 0.625mW Through Hole TO-92
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Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantBipolar (BJT)
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21,300
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1of 1 suppliers
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 21,300 | — | — | Minimum order quantity 50Order multiple 50 | Bag-packed | In Stock |
Supplier Part Details
Technical Attributes
Collector - Emitter Voltage VCEO40V
Configuration-
Current - Collector Cutoff100nA
Current - Collector(Ic)200mA
DC Current Gain400
Emitter-Base Voltage VEBO5V
Number1 PNP
Operating Temperature-55℃~+150℃
Pd - Power Dissipation0.625mW
Transition frequency(fT)250MHz
typePNP
Vce Saturation(VCE(sat))400mV