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by ROHM

ROHM NMOS SCT2H12NZ, Vds=1700 V, 3.7 A, TO-3PFM, , 3

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
SCT2H12NZGC11
Farnell(1/4)

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Confirmed Stock
4,652
6 of 9 suppliers stocked
Best Unit Price
—
Availability
6of 9 suppliers
Fastest delivery: 1428 days
Shortest factory lead: 23 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Mouser
Mouser
1,808—23 weeks
Minimum order quantity 1Order multiple 450
TubeIn Stock
Future Electronics
Future Electronics
810—26 weeks
Minimum order quantity 30Order multiple 30
—In Stock
Future Electronics
Future Electronics
810—26 weeks
Minimum order quantity 30Order multiple 30
—In Stock
Future Electronics
Future Electronics
60—26 weeks
Minimum order quantity 30Order multiple 30
—In Stock
Future Electronics
Future Electronics
0—26 weeks
Minimum order quantity 1
—No Stock
Digi-Key
Digi-Key
622—27 weeks
Minimum order quantity 1Order multiple 30
TubeIn Stock
Farnell
Farnell
2711428 days—
Minimum order quantity 1
—In Stock
LCSC
LCSC
C129166
167——
Minimum order quantity 1Order multiple 30
Tube-packedIn Stock
RS
RS
104——
Minimum order quantity 2Order multiple 2
TUIn Stock

Supplier Part Details

Supplier DescriptionLife CyclePackagingLinks
RS
RS
1332860P
ROHM SCT2H12NZ N-Kanal, THT MOSFET 1700 V / 3,7 A 35 W, 3-Pin TO-3PFM—TU
Farnell
Farnell
2531101
ROHM - SCT2H12NZGC11 - Leistungs-MOSFET, Siliziumkarbid, n-Kanal, 3.7A, 1.7kV, 1.15 Ohm, 18V, 2.8V——
Future Electronics
Future Electronics
3066250
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFMActive—
LCSC
LCSC
C129166
1.7kV 3.7A 35W 1.15Ω@18V 2.8V@0.9mA TO-3PF-3 Single FETs, MOSFETs ROHS—Tube-packed
Mouser
Mouser
755-SCT2H12NZGC11
SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC—Tube
Digi-Key
Digi-Key
SCT2H12NZGC11-ND
N-Channel 1700 V 3.7A (Tc) 35W (Tc) Through Hole TO-3PFMActiveTube
Future Electronics
Future Electronics
3097165
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFMActive—
Future Electronics
Future Electronics
5174051
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFMActive—
Future Electronics
Future Electronics
5192614
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFMActive—

Technical Attributes

Anzahl der Pins3Pin(s)
Bauform - TransistorTO-3PFM
Betriebstemperatur, max.175°C
Dauer-Drainstrom Id3.7A
Drain-Source-Durchgangswiderstand1.15ohm
Drain-Source-Spannung Vds1.7kV
euEccnNLR
Gate-Source-Schwellenspannung, max.2.8V
hazardousfalse
Kanaltypn-Kanal
MOSFET-Modul-KonfigurationEins
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
Produktpalette-
Rds(on)-Prüfspannung18V
rohsPhthalatesCompliantYES
usEccnEAR99
Verlustleistung35W