950 nm 100 mA ±25° Through Hole Infrared Emitting Diode
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Datasheets:Datasheet (Future Electronics)
Country of origin: —RoHS Compliantinfrared emitters detectors
TME(1/2)
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3,415
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Availability
1of 3 suppliers
Shortest factory lead: 6 weeks
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 3,415 | — | — | Minimum order quantity 1 | BG1 | In Stock | |
 | 0 | — | 6 weeks | Minimum order quantity 5,000Order multiple 5,000 | — | No Stock | |
| 0 | — | 6 weeks | Minimum order quantity 5,000Order multiple 5,000 | BAG | No Stock |
Supplier Part Details
| Supplier | Description | RoHS | Life Cycle | Category | Weight | Packaging | Links |
|---|---|---|---|---|---|---|---|
TME TSSS2600 | IR Sender; 950nm; transparent; 2,6mW; 25°; 1,25÷1,6VDC; THT; 100mA | — | — | Infrarot-LEDs | — | BG1 | |
Future Electronics 4020609 | 950 nm 100 mA ±25° Through Hole Infrared Emitting Diode | Yes | Active | infrared emitters detectors | 0.1524 g | — | |
Future Electronics TSSS2600 | 950 nm 100 mA ±25° Through Hole Infrared Emitting Diode | Yes | Active | infrared emitters detectors | 0.1524 g | BAG |
Technical Attributes
ATS_ASIA0
ATS_EU0
ATS_NA0
availableRegionNA:EU:Asia:China
leadFreeY
ncnrFlagN
overview (en)<p>The TSSS2600 is a infrared emitting diode. It Consist of 950 nm wavelengh in GaAs technology, molded in a miniature, clear plastic package with side view lens.</p><p><strong>Features:</strong></p><ul> <li>Package type: leaded </li> <li>Package form: side view </li> <li>Dimensions (L x W x H in mm): 3.6 x 2.2 x 5 </li> <li>Peak wavelength: λp = 950 nm </li> <li>High reliability </li> <li>High radiant power </li> <li>High radiant intensity </li> <li>Angle of half intensity: ϕ = ± 25°, horizontal </li> <li>Low forward voltage </li> <li>Suitable for high pulse current operation </li> <li>Good spectral matching with Si photodetectors </li> <li>Package matched with detector TEST2600 </li> <li>Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC</li></ul><p><strong>Applications:</strong></p><p>Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)</p>
PBO_ASIA0
PBO_EU0
PBO_NA0
USATariff0