Si2319DDS-T1-GE3

Vishay Siliconix TrenchFET P-Kanal, SMD MOSFET 40 V / 3,6 A 1,7 W, 3-Pin SOT-23

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RS(1/2)

Supply Risk Summary

Supply chain risk trend is available on Pro and Enterprise plans.

Single source

Confirmed Stock

10,850

Single source

Best Unit Price

—

Availability

1of 3 suppliers

No lead time data

Supplier	Supplier Part Number	Stock	Delivery	Factory Lead	MOQ	Packaging	Status
RS	1783853	3,950	—	—	Minimum order quantity 50Order multiple 50	PK	In Stock
RS	1783853P	3,900	—	—	Minimum order quantity 50Order multiple 50	RL	In Stock
RS	1783663	3,000	—	—	Minimum order quantity 3,000Order multiple 3,000	RL	In Stock

Supplier	Description	Packaging
RS 1783853	Vishay Siliconix TrenchFET P-Kanal, SMD MOSFET 40 V / 3,6 A 1,7 W, 3-Pin SOT-23	PK
RS 1783663	Vishay Siliconix TrenchFET P-Kanal, SMD MOSFET 40 V / 3,6 A 1,7 W, 3-Pin SOT-23	RL
RS 1783853P	Vishay Siliconix TrenchFET P-Kanal, SMD MOSFET 40 V / 3,6 A 1,7 W, 3-Pin SOT-23	RL

Breite1.4mm

Channel-ModusEnhancement

Channel-TypP

Dauer-Drainstrom max.3,6 A

Drain-Source-Spannung max.40 V

Drain-Source-Widerstand max.100 mΩ

Gate-Schwellenspannung max.2.5V

Gate-Schwellenspannung min.1V

Gate-Source Spannung max.±20 V

Höhe1.02mm

Montage-TypSMD

Pinanzahl3

SerieTrenchFET

Transistor-KonfigurationEinfach

Verlustleistung max.1,7 W