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MT53E1G32D2FW-046 AAT:B

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32Gbit 1.06V~1.17V 2.133GHz LPDDR4X SDRAM TFBGA-200(10x14.5) Memory (ICs) RoHS

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: TWRoHS Compliant MSL MSL 3
MT53E1G32D2FW-046 AAT:B
Farnell

Supply Risk Summary

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Confirmed Stock
1,333
Single source
Best Unit Price
—
Availability
1of 5 suppliers
Shortest factory lead: 39 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Winsource
Winsource
1,333——
Minimum order quantity 1
—In Stock
Digi-Key
Digi-Key
0—39 weeks
Minimum order quantity 1Order multiple 1,360
BoxNo Stock
Farnell
Farnell
0364 days—
Minimum order quantity 1
—No Stock
LCSC
LCSC
0——
Minimum order quantity 1Order multiple 1,360
TrayNo Stock
TME
TME
0——
Minimum order quantity 1,360
—No Stock

Supplier Part Details

Supplier DescriptionRoHSMSLLife CycleSVHCCategoryCountryWeightTariff CodePackagingLinks
Digi-Key
Digi-Key
557-MT53E1G32D2FW-046AAT:B-ND
SDRAM - Mobile LPDDR4X Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)—MSL 3Active—Integrated Circuits (ICs)——8542.32.0036 (US HTS)Box
Winsource
Winsource
MT53E1G32D2FW-046 AAT:B
LPDDR4-4266 1Gx32 (32Gb)Yes————————
Farnell
Farnell
3880972
MICRON - MT53E1G32D2FW-046 AAT:B - DRAM, Mobile LPDDR4, 32 Gbit, 1G x 32 Bit, 2.133 GHz, TFBGA, 200 Pin(s)Yes—ActiveNo SVHC (17-Dec-2015)—TW—85423239 (EU CN)—
LCSC
LCSC
C5128623
32Gbit 1.06V~1.17V 2.133GHz LPDDR4X SDRAM TFBGA-200(10x14.5) Memory (ICs) RoHSYes———DDR SDRAM—0.00025 g—Tray
TME
TME
MT53E1G32D2FW046AA
IC: DRAM Speicher; 32GbDRAM; 2,133GHz; -40÷105°C; 1,1÷1,17V——New—DRAM Speicher - Integrierte Schaltungen————

Technical Attributes

Anzahl der Pins200Pin(s)
Betriebstemperatur, max.105°C
Betriebstemperatur, min.-40°C
DRAM-AusführungMobile LPDDR4
euEccnNLR
hazardousfalse
IC-Gehäuse / BauformTFBGA
IC-MontageOberflächenmontage
isCanonicalY
MSLMSL 3 - 168 Stunden
productTraceabilityYes-Date/Lot Code
Produktpalette-
rohsPhthalatesCompliantYES
Speicherdichte32Gbit
Speicherkonfiguration1G x 32 Bit
Taktfrequenz, max.2.133GHz
usEccnEAR99
Versorgungsspannung, nom.1.1V