FDS5690

ONSEMI - FDS5690 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.028 ohm, SOIC, Oberflächenmontage

Lifecycle: Obsolete Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)

Country of origin: CHRoHS Compliant

Farnell

Supply Risk Summary

Supply chain risk trend is available on Pro and Enterprise plans.

Single source

Obsolete

Confirmed Stock

443

Single source

Best Unit Price

—

Availability

1of 1 suppliers

Fastest delivery: 364 days

Supplier	Supplier Part Number	Stock	Delivery	Factory Lead	MOQ	Packaging	Status
Farnell	3003909	443	364 days	—	Minimum order quantity 1	—	In Stock

Supplier	Description	RoHS	Life Cycle	SVHC	Country	Tariff Code	Links
Farnell 3003909	ONSEMI - FDS5690 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.028 ohm, SOIC, Oberflächenmontage	Yes	Obsolete	No SVHC (15-Jan-2018)	CH	85413000 (EU CN)

Farnell

Anzahl der Pins8Pin(s)

Bauform - TransistorSOIC

Betriebstemperatur, max.150°C

Dauer-Drainstrom Id7A

Drain-Source-Durchgangswiderstand0.028ohm

Drain-Source-Spannung Vds60V

euEccnNLR

Gate-Source-Schwellenspannung, max.2.5V

hazardousfalse

isCanonicalY

Kanaltypn-Kanal

MSLMSL 1 - unbegrenzt

productTraceabilityYes-Date/Lot Code

ProduktpalettePowerTrench

Qualifikation-

Rds(on)-Prüfspannung10V

rohsPhthalatesCompliantYES

TransistormontageOberflächenmontage

usEccnEAR99

Verlustleistung2.5W