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by Alliance Memory

SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: TWRoHS Compliant MSL MSL 3
AS4C8M16SA-6TIN
Farnell(1/7)

Supply Risk Summary

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Confirmed Stock
25,359
8 of 12 suppliers stocked
Best Unit Price
—
Availability
8of 12 suppliers
Fastest delivery: 49 days
Shortest factory lead: 6 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Digi-Key
Digi-Key
1450-1267-ND
18,510—16 weeks
Minimum order quantity 1
TrayIn Stock
Mouser
Mouser
3,436—16 weeks
Minimum order quantity 1
TrayIn Stock
Avnet Silica
Avnet Silica
AIAAS4C8M16SA6TIN
2,26449 days—
Minimum order quantity 108Order multiple 108
—In Stock
Avnet Silica
Avnet Silica
AS4C8M16SA-6TIN
0114 days—
Minimum order quantity 108Order multiple 108
—No Stock
Future Electronics
Future Electronics
864—6 weeks
Minimum order quantity 2Order multiple 108
—In Stock
Future Electronics
Future Electronics
0—16 weeks
Minimum order quantity 1
TRAYNo Stock
TME
TME
227——
Minimum order quantity 1
TR2In Stock
Farnell
Farnell
27120 days—
Minimum order quantity 1
—In Stock
Winsource
Winsource
23——
Minimum order quantity 6
—In Stock
RS
RS
4——
Minimum order quantity 2Order multiple 2
PKIn Stock
RS
RS
4——
Minimum order quantity 2Order multiple 2
PUIn Stock
RS
RS
0——
Minimum order quantity 108Order multiple 108
PUNo Stock

Supplier Part Details

Supplier DescriptionRoHSMSLLife CycleSVHCCategoryCountryWeightTariff CodePackagingLinks
Avnet Silica
Avnet Silica
AIAAS4C8M16SA6TIN
TSOP 54/I°/IC SDRAM 128MBIT 166MHZYes————————
RS
RS
2308438
Alliance Memory SDRAM 128MBit 8 M x 16 DDR 166MHz 16bit Bits/Wort 5ns TSOP 54-Pin, 3 V bis 3,6 V————————PU
TME
TME
AS4C8M16SA-6TIN
IC: DRAM Speicher; 128MbDRAM; 2Mx16bitx4; 3,3V; 166MHz; 5,4ns; Tray————DRAM Speicher - Integrierte Schaltungen———TR2
Farnell
Farnell
4260937
ALLIANCE MEMORY - AS4C8M16SA-6TIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)Yes—ActiveNo SVHC (04-Feb-2026)—TW—85423231 (EU CN)—
Future Electronics
Future Electronics
4055559
AS4C4M16SA Series 128 Mb (8 M x 16) A-die 3.3V 166 MHz SDRAM - TSOP II-54Yes—Active—component dram—2.014815 g——
Mouser
Mouser
913-4C8M16SA-6TIN
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Industrial temp - TrayYes———DRAM—0.003862 g8542320002 (US HTS)Tray
Digi-Key
Digi-Key
1450-1267-ND
SDRAM Memory IC 128Mbit Parallel 166 MHz 5 ns 54-TSOP II—MSL 3Active—Integrated Circuits (ICs)——8542.32.0002 (US HTS)Tray
Winsource
Winsource
AS4C8M16SA-6TIN
IC DRAM 128MBIT PAR 54TSOP IIYes————————
Avnet Silica
Avnet Silica
AS4C8M16SA-6TIN
TSOP 54/I°/IC SDRAM 128MBIT 166MHZYes————————
RS
RS
2308439P
Alliance Memory SDRAM 128MBit 8 M x 16 DDR 166MHz 16bit Bits/Wort 5ns TSOP 54-Pin, 3 V bis 3,6 V————————PU
Future Electronics
Future Electronics
AS4C8M16SA-6TIN
AS4C4M16SA Series 128 Mb (8 M x 16) A-die 3.3V 166 MHz SDRAM - TSOP II-54Yes—Active—component dram—2.014815 g—TRAY
RS
RS
2308439
Alliance Memory SDRAM 128MBit 8 M x 16 DDR 166MHz 16bit Bits/Wort 5ns TSOP 54-Pin, 3 V bis 3,6 V————————PK

Technical Attributes

Anzahl der Pins54Pin(s)
Betriebstemperatur, max.85°C
Betriebstemperatur, min.-40°C
DRAM-AusführungSDRAM
euEccnNLR
hazardousfalse
IC-Gehäuse / BauformTSOP-II
IC-MontageOberflächenmontage
isCanonicalY
MSLMSL 3 - 168 Stunden
productTraceabilityNo
Produktpalette-
rohsPhthalatesCompliantYES
Speicherdichte128Mbit
Speicherkonfiguration8M x 16 Bit
Taktfrequenz, max.166MHz
usEccnEAR99
Versorgungsspannung, nom.3.3V