NEXPERIA - BC856BW-QF - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 200 mW, SOT-323, Oberflächenmontage
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Datasheets:Datasheet (Farnell)
Country of origin: CN

Farnell
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Supplier Part Details
| Supplier | Description | RoHS | Life Cycle | SVHC | Country | Tariff Code | Links |
|---|---|---|---|---|---|---|---|
Farnell 3912186 | NEXPERIA - BC856BW-QF - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 200 mW, SOT-323, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | CN | 85412900 (EU CN) | |
Farnell 3912186RL | NEXPERIA - BC856BW-QF - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 200 mW, SOT-323, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | CN | 85412900 (EU CN) | |
Farnell 4319581 | NEXPERIA - BC856BW-QF - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 200 mW, SOT-323, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | CN | 85412900 (EU CN) |
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorSOT-323
Betriebstemperatur, max.150°C
Dauerkollektorstrom100mA
DC-Stromverstärkung (hFE), min.220hFE
euEccnNLR
hazardousfalse
isCanonicalY
Kollektor-Emitter-Spannung, max.65V
productTraceabilityYes-Date/Lot Code
Produktpalette-
Qualifikation-
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
Übergangsfrequenz100MHz
usEccnEAR99
Verlustleistung200mW
WandlerpolaritätPNP