NEXPERIA - BC856BQCZ - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 450 mW, DFN1412D, Oberflächenmontage
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Datasheets:Datasheet (Farnell)
Country of origin: CN
Farnell
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7,910
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1of 2 suppliers
Fastest delivery: 372 days
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Supplier Part Details
| Supplier | Description | RoHS | Life Cycle | SVHC | Country | Tariff Code | Links |
|---|---|---|---|---|---|---|---|
 Farnell 3884231 | NEXPERIA - BC856BQCZ - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 450 mW, DFN1412D, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | CN | 85412100 (EU CN) | |
Farnell 3884231RL | NEXPERIA - BC856BQCZ - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 450 mW, DFN1412D, Oberflächenmontage | — | Active | No SVHC (25-Jun-2025) | — | 85412100 (EU CN) |
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorDFN1412D
Betriebstemperatur, max.150°C
Dauerkollektorstrom100mA
DC-Stromverstärkung (hFE), min.220hFE
euEccnNLR
hazardousfalse
isCanonicalY
Kollektor-Emitter-Spannung, max.65V
MSL-
productTraceabilityYes-Date/Lot Code
ProduktpaletteBC856xQC Series
Qualifikation-
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
Übergangsfrequenz100MHz
usEccnEAR99
Verlustleistung450mW
WandlerpolaritätPNP