NEXPERIA - BC856BMYL - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 100 mA, 250 mW, SOT-883, Oberflächenmontage
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Datasheets:Datasheet (Farnell)
Country of origin: CN
Farnell
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Stock & Availability
Supplier Part Details
| Supplier | Description | RoHS | Life Cycle | SVHC | Country | Tariff Code | Links |
|---|---|---|---|---|---|---|---|
 Avnet Silica BC856BMYL | BC856BM/SOT883/XQFN3/12NC:934069544315 | Yes | — | — | — | — | |
 Farnell 2545351 | NEXPERIA - BC856BMYL - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 100 mA, 250 mW, SOT-883, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | CN | 85412100 (EU CN) | |
Farnell 2545351RL | NEXPERIA - BC856BMYL - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 100 mA, 250 mW, SOT-883, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | CN | 85412100 (EU CN) |
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorSOT-883
Betriebstemperatur, max.150°C
Dauerkollektorstrom100mA
DC-Stromverstärkung (hFE), min.220hFE
euEccnNLR
hazardousfalse
isCanonicalY
Kollektor-Emitter-Spannung, max.60V
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
Produktpalette-
QualifikationAEC-Q101
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
Übergangsfrequenz100MHz
usEccnEAR99
Verlustleistung250mW
WandlerpolaritätPNP