DIODES INC. - BC856BW - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 200 mW, SOT-323, Oberflächenmontage
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Country of origin: CN

Farnell
Supply Risk Summary
Supply chain risk trend is available on Pro and Enterprise plans.
Single source
Sign in to view detailed supply risk factors and indicators.
View PlansConfirmed Stock
7,378
Single source
Best Unit Price
—
Availability
1of 3 suppliers
Fastest delivery: 78 days
Stock by Supplier
Stock & Availability
Supplier Part Details
| Supplier | Description | RoHS | Life Cycle | SVHC | Country | Tariff Code | Links |
|---|---|---|---|---|---|---|---|
Farnell 1902486 | DIODES INC. - BC856BW - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 200 mW, SOT-323, Oberflächenmontage | Yes | Active | No SVHC (04-Feb-2026) | CN | 85412900 (EU CN) | |
Farnell 1902486RL | DIODES INC. - BC856BW - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 200 mW, SOT-323, Oberflächenmontage | Yes | Active | No SVHC (04-Feb-2026) | CN | 85412900 (EU CN) | |
Farnell 4318441 | DIODES INC. - BC856BW - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 200 mW, SOT-323, Oberflächenmontage | Yes | Active | No SVHC (04-Feb-2026) | CN | 85412900 (EU CN) |
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorSOT-323
Betriebstemperatur, max.150°C
Dauerkollektorstrom100mA
DC-Stromverstärkung (hFE), min.220hFE
euEccnNLR
hazardousfalse
isCanonicalY
Kollektor-Emitter-Spannung, max.65V
MSL-
productTraceabilityYes-Date/Lot Code
Produktpalette-
Qualifikation-
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
Übergangsfrequenz200MHz
usEccnEAR99
Verlustleistung200mW
WandlerpolaritätPNP