MMBT5401LT1G
SearchONSEMI - MMBT5401LT1G - Bipolarer Einzeltransistor (BJT), Universal, PNP, 150 V, 500 mA, 225 mW, SOT-23, Oberflächenmontage
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Country of origin: CNRoHS Compliant
Farnell
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1of 2 suppliers
Fastest delivery: 78 days
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Supplier Part Details
| Supplier | Description | RoHS | Life Cycle | SVHC | Country | Tariff Code | Links |
|---|---|---|---|---|---|---|---|
 Farnell 1459108 | ONSEMI - MMBT5401LT1G - Bipolarer Einzeltransistor (BJT), Universal, PNP, 150 V, 500 mA, 225 mW, SOT-23, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | CN | 85412100 (EU CN) | |
Farnell 2317820 | ONSEMI - MMBT5401LT1G - Bipolarer Einzeltransistor (BJT), Universal, PNP, 150 V, 500 mA, 225 mW, SOT-23, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | CN | 85412900 (EU CN) |
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorSOT-23
Betriebstemperatur, max.150°C
Dauerkollektorstrom500mA
DC-Stromverstärkung (hFE), min.100hFE
euEccnNLR
hazardousfalse
isCanonicalY
Kollektor-Emitter-Spannung, max.150V
MSL-
productTraceabilityYes-Date/Lot Code
ProduktpaletteMMBTxxxx
QualifikationAEC-Q101
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
Übergangsfrequenz300MHz
usEccnEAR99
Verlustleistung225mW
WandlerpolaritätPNP