BCW32LT1G
SearchONSEMI - BCW32LT1G - Bipolarer Einzeltransistor (BJT), NPN, 32 V, 100 mA, 225 mW, SOT-23, Oberflächenmontage
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Country of origin: CNRoHS Compliant
Farnell
Supply Risk Summary
Supply chain risk trend is available on Pro and Enterprise plans.
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View PlansConfirmed Stock
4,064
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Best Unit Price
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Availability
1of 1 suppliers
Fastest delivery: 83 days
Stock by Supplier
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 4,064 | 83 days | — | Minimum order quantity 5 | — | In Stock |
Supplier Part Details
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorSOT-23
Betriebstemperatur, max.150°C
Dauerkollektorstrom100mA
DC-Stromverstärkung (hFE), min.200hFE
euEccnNLR
hazardousfalse
isCanonicalY
Kollektor-Emitter-Spannung, max.32V
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
Produktpalette-
QualifikationAEC-Q101
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
Übergangsfrequenz-
usEccnEAR99
Verlustleistung225mW
WandlerpolaritätNPN