VISHAY - SI2307CDS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 3.5 A, 0.088 ohm, SOT-23, Oberflächenmontage
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Country of origin: ILRoHS Compliant
Farnell
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View PlansConfirmed Stock
37,426
2 of 2 suppliers stocked
Best Unit Price
—
Availability
2of 2 suppliers
Fastest delivery: 357 days
Stock by Supplier
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | C141561 | 20,280 | — | — | Minimum order quantity 5Order multiple 3,000 | Tape & Reel (TR) | In Stock |
 | 17,146 | 357 days | — | Minimum order quantity 5 | — | In Stock |
Supplier Part Details
| Supplier | Description | RoHS | Life Cycle | SVHC | Country | Tariff Code | Packaging | Links |
|---|---|---|---|---|---|---|---|---|
Farnell 1779262 | VISHAY - SI2307CDS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 3.5 A, 0.088 ohm, SOT-23, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | IL | 85412900 (EU CN) | — | |
LCSC C141561 | 30V 3.5A 138mΩ@4.5V,2.5A 1.8W 3V@250uA 1 P-Channel SOT-23 MOSFETs ROHS | — | — | — | — | — | Tape & Reel (TR) |
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorSOT-23
Betriebstemperatur, max.150°C
Dauer-Drainstrom Id3.5A
Drain-Source-Durchgangswiderstand0.088ohm
Drain-Source-Spannung Vds30V
euEccnNLR
Gate-Source-Schwellenspannung, max.1V
hazardousfalse
isCanonicalY
Kanaltypp-Kanal
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
Produktpalette-
Qualifikation-
Rds(on)-Prüfspannung10V
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
usEccnEAR99
Verlustleistung1.1W