INFINEON - IRF3808STRLPBF - Leistungs-MOSFET, n-Kanal, 75 V, 106 A, 7000 µohm, TO-263 (D2PAK), Oberflächenmontage
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Country of origin: MYRoHS Compliant
Farnell
Supply Risk Summary
Supply chain risk trend is available on Pro and Enterprise plans.
Single source
Active
Sign in to view detailed supply risk factors and indicators.
View PlansConfirmed Stock
2,526
Single source
Best Unit Price
—
Availability
1of 1 suppliers
Fastest delivery: 190 days
Stock by Supplier
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 2,526 | 190 days | — | Minimum order quantity 1 | — | In Stock |
Supplier Part Details
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorTO-263 (D2PAK)
Betriebstemperatur, max.175°C
Dauer-Drainstrom Id106A
Drain-Source-Durchgangswiderstand7000µohm
Drain-Source-Spannung Vds75V
euEccnNLR
Gate-Source-Schwellenspannung, max.4V
hazardousfalse
isCanonicalY
Kanaltypn-Kanal
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
ProduktpaletteHEXFET
Qualifikation-
Rds(on)-Prüfspannung10V
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
usEccnEAR99
Verlustleistung200W