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by Vishay

VISHAY - SI2337DS-T1-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 2.2 A, 0.27 ohm, TO-236, Oberflächenmontage

Lifecycle: Inactive Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: USRoHS CompliantP-Kanal-Transistoren SMD
SI2337DS-T1-E3
Farnell(1/2)

Supply Risk Summary

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Inactive

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Confirmed Stock
0
Not in stock
Best Unit Price
—
Availability
0of 4 suppliers
No lead time data

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Farnell
Farnell
087 days—
Minimum order quantity 5
—No Stock
Farnell
Farnell
087 days—
Minimum order quantity 100
—No Stock
Farnell
Farnell
0113 days—
Minimum order quantity 3,000
—No Stock
TME
TME
0——
Minimum order quantity 1
—No Stock

Supplier Part Details

Supplier DescriptionRoHSLife CycleSVHCCategoryCountryTariff CodeLinks
Farnell
Farnell
2335051
VISHAY - SI2337DS-T1-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 2.2 A, 0.27 ohm, TO-236, OberflächenmontageYesActiveNo SVHC (21-Jan-2025)—CN85412900 (EU CN)
Farnell
Farnell
2101436RL
VISHAY - SI2337DS-T1-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 2.2 A, 0.27 ohm, TO-236, OberflächenmontageYesInactiveNo SVHC (25-Jun-2025)—US85412900 (EU CN)
Farnell
Farnell
2101436
VISHAY - SI2337DS-T1-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 2.2 A, 0.27 ohm, TO-236, OberflächenmontageYesInactiveNo SVHC (25-Jun-2025)—US85412900 (EU CN)
TME
TME
SI2337DS-T1-E3
Transistor: P-MOSFET; unipolar; -80V; -1,75A; Idm: -7A; 1,6W; SOT23—Blocked For Zbl Backorders—P-Kanal-Transistoren SMD——

Technical Attributes

Anzahl der Pins3Pin(s)
Bauform - TransistorTO-236
Betriebstemperatur, max.150°C
Dauer-Drainstrom Id2.2A
Drain-Source-Durchgangswiderstand0.27ohm
Drain-Source-Spannung Vds80V
euEccnNLR
Gate-Source-Schwellenspannung, max.4V
hazardousfalse
isCanonicalN
Kanaltypp-Kanal
productTraceabilityYes-Date/Lot Code
Produktpalette-
Qualifikation-
Rds(on)-Prüfspannung10V
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
usEccnEAR99
Verlustleistung2.5W