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by ROHM

N-Channel 40 V 70A (Tc) 89W (Tc) Surface Mount TO-252

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: THRoHS Compliant MSL MSL 1Discrete Semiconductor Products
RD3G07BBGTL1
Farnell(1/3)

Supply Risk Summary

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Confirmed Stock
10,745
4 of 8 suppliers stocked
Best Unit Price
—
Availability
4of 8 suppliers
Fastest delivery: 155 days
Shortest factory lead: 18 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Digi-Key
Digi-Key
846-RD3G07BBGTL1CT-ND
2,944—18 weeks
Minimum order quantity 1
Cut Tape (CT)In Stock
Digi-Key
Digi-Key
846-RD3G07BBGTL1DKR-ND
2,944—18 weeks
Minimum order quantity 1
Digi-Reel®In Stock
Digi-Key
Digi-Key
846-RD3G07BBGTL1TR-ND
2,944—18 weeks
Minimum order quantity 2,500Order multiple 2,500
Tape & Reel (TR)In Stock
TME
TME
962——
Minimum order quantity 40
—In Stock
Mouser
Mouser
839—18 weeks
Minimum order quantity 1
Reel, Cut TapeIn Stock
Farnell
Farnell
56155 days—
Minimum order quantity 1
—In Stock
Farnell
Farnell
56155 days—
Minimum order quantity 100
—In Stock
Avnet Silica
Avnet Silica
RD3G07BBGTL1
0999 days—
Minimum order quantity 2,500
—No Stock

Supplier Part Details

Supplier DescriptionRoHSMSLLife CycleSVHCCategoryCountryTariff CodePackagingLinks
Digi-Key
Digi-Key
846-RD3G07BBGTL1DKR-ND
N-Channel 40 V 70A (Tc) 89W (Tc) Surface Mount TO-252—MSL 1Active—Discrete Semiconductor Products—8541.29.0055 (US HTS)Digi-Reel®
Digi-Key
Digi-Key
846-RD3G07BBGTL1TR-ND
N-Channel 40 V 70A (Tc) 89W (Tc) Surface Mount TO-252—MSL 1Active—Discrete Semiconductor Products—8541.29.0055 (US HTS)Tape & Reel (TR)
Avnet Silica
Avnet Silica
RD3G07BBGTL1
Nch 40V 150A, TO-252 (DPAK), Power MOSFETYes———————
Farnell
Farnell
4158111RL
ROHM - RD3G07BBGTL1 - Leistungs-MOSFET, n-Kanal, 40 V, 150 A, 2300 µohm, TO-252 (DPAK), Oberflächenmontage——ActiveTo Be Advised—TH85412900 (EU CN)—
Farnell
Farnell
4158111
ROHM - RD3G07BBGTL1 - Leistungs-MOSFET, n-Kanal, 40 V, 150 A, 2300 µohm, TO-252 (DPAK), Oberflächenmontage——ActiveTo Be Advised—TH85412900 (EU CN)—
TME
TME
RD3G07BBGTL1-ROH-0
Transistor: N-MOSFET; 40V; 150A; 89W; DPAK,TO252——External Warehouse—N-Kanal-Transistoren SMD———
Digi-Key
Digi-Key
846-RD3G07BBGTL1CT-ND
N-Channel 40 V 70A (Tc) 89W (Tc) Surface Mount TO-252—MSL 1Active—Discrete Semiconductor Products—8541.29.0055 (US HTS)Cut Tape (CT)
Mouser
Mouser
755-RD3G07BBGTL1
MOSFETs Transistor, MOSFET Nch, 40V(Vdss), 70A(Id), (4.5V Drive)Yes———MOSFETs—8541290000Reel, Cut Tape

Technical Attributes

Anzahl der Pins3Pin(s)
Bauform - TransistorTO-252 (DPAK)
Betriebstemperatur, max.150°C
Dauer-Drainstrom Id150A
Drain-Source-Durchgangswiderstand2300µohm
Drain-Source-Spannung Vds40V
euEccnNLR
Gate-Source-Schwellenspannung, max.2.5V
hazardousfalse
isCanonicalN
Kanaltypn-Kanal
productTraceabilityYes-Date/Lot Code
Produktpalette-
Qualifikation-
Rds(on)-Prüfspannung10V
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
usEccnEAR99
Verlustleistung89W