IPB123N10N3G-VB
Searchby Vbsemi Elec
100V 100A 4V 30mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantMOSFETs
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
| 0 | — | — | Minimum order quantity 1Order multiple 50 | Tube-packed | No Stock |
Supplier Part Details
Technical Attributes
Current - Continuous Drain(Id)100A
Drain to Source Voltage100V
Gate Charge(Qg)160nC@10V
Gate Threshold Voltage (Vgs(th))4V
Input Capacitance(Ciss)6.55nF
Number1 N-channel
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)665pF
Pd - Power Dissipation-
RDS(on)30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)265pF
TypeN-Channel