AS6C1616-55TIN
SearchAS6C1616 Series 1 Mb (1024 K x 16) 55 ns Low Power CMOS SRAM - TFBGA-48
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Future Electronics)
Country of origin: —RoHS Compliantasynchronous
Future Electronics
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Shortest factory lead: 30 weeks
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
| 0 | — | 30 weeks | Minimum order quantity 960Order multiple 96 | TRAY | No Stock |
Supplier Part Details
Technical Attributes
ATS_ASIA0
ATS_EU0
ATS_NA0
availableRegionNA:EU:Asia:China
eccn3A991.b.2.a
hts_code8542.32.00.41
leadFreeY
ncnrFlagN
overview (en)<p><strong>The AS6C1616-55TIN is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology.</strong></p><p>The AS6C1616 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.</p><p><strong>Features:</strong></p><ul> <li>Fast access time : 55/70 ns </li> <li>Low power consumption: </li> <li>Operating current : 45/30 mA (TYP.) </li> <li>Standby current : 4μA (TYP.) SL-version </li> <li>Single 2.7 V ~ 3.6 V power supply </li> <li>All inputs and outputs TTL compatible </li> <li>Fully static operation </li> <li>Tri-state output </li> <li>Data byte control : <ul> <li>LB# (DQ0 ~ DQ7) </li> <li>UB# (DQ8 ~ DQ15)</li> </ul> </li> <li>Data retention voltage : 1.2 V (MIN.) </li> <li>Lead free and green package available </li> <li>Package : 48-ball 6 mm x 8 mm TFBGA.</li></ul>
PBO_ASIA0
PBO_EU0
PBO_NA0
ship_to_rotaN/A
ship_to_usaN/A
USATariff0