Skip to content

Resources

Docs

Account

IRLML2402TRPBF

Search

by Infineon

INFINEON - IRLML2402TRPBF - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.25 ohm, SOT-23, Oberflächenmontage

Lifecycle: Obsolete Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: USRoHS Compliant MSL MSL 1
IRLML2402TRPBF
Farnell(1/2)

Supply Risk Summary

Supply chain risk trend is available on Pro and Enterprise plans.
No supply
Obsolete

Sign in to view detailed supply risk factors and indicators.

View Plans
Confirmed Stock
0
Not in stock
Best Unit Price
—
Availability
0of 5 suppliers
Shortest factory lead: 98 weeks

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Bürklin
Bürklin
0——
Minimum order quantity 3,000
piece(s)No Stock
Digi-Key
Digi-Key
0—98 weeks
Minimum order quantity 3,000Order multiple 3,000
Tape & Reel (TR)No Stock
Farnell
Farnell
084 days—
Minimum order quantity 6,000
—No Stock
Farnell
Farnell
084 days—
Minimum order quantity 5
—No Stock
Farnell
Farnell
084 days—
Minimum order quantity 100
—No Stock

Supplier Part Details

Supplier DescriptionRoHSMSLLife CycleSVHCCategoryCountryTariff CodePackagingLinks
Farnell
Farnell
9102710
INFINEON - IRLML2402TRPBF - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.25 ohm, SOT-23, OberflächenmontageYes—ObsoleteTo Be Advised—US85412900 (EU CN)—
Farnell
Farnell
4335720
INFINEON - IRLML2402TRPBF - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.25 ohm, SOT-23, OberflächenmontageYes—ObsoleteNo SVHC (21-Jan-2025)—US85412900 (EU CN)—
Farnell
Farnell
9102710RL
INFINEON - IRLML2402TRPBF - Leistungs-MOSFET, n-Kanal, 20 V, 1.2 A, 0.25 ohm, SOT-23, OberflächenmontageYes—ObsoleteTo Be Advised—US85412900 (EU CN)—
Digi-Key
Digi-Key
IRLML2402PBFTR-ND
N-Channel 20 V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23—MSL 1Obsolete—Discrete Semiconductor Products—8541.21.0095 (US HTS)Tape & Reel (TR)
Bürklin
Bürklin
24S3360
Infineon Technologies N channel HEXFET power MOSFET, 1.2 A, SOT-23, IRLML2402TRPBFYes—ActiveYesMOSFETsMY85412900 (EU CN)piece(s)

Technical Attributes

Anzahl der Pins3Pin(s)
Bauform - TransistorSOT-23
Betriebstemperatur, max.150°C
Dauer-Drainstrom Id1.2A
Drain-Source-Durchgangswiderstand0.25ohm
Drain-Source-Spannung Vds20V
euEccnNLR
Gate-Source-Schwellenspannung, max.700mV
hazardousfalse
isCanonicalY
Kanaltypn-Kanal
MSL-
productTraceabilityYes-Date/Lot Code
Produktpalette-
Qualifikation-
Rds(on)-Prüfspannung4.5V
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
usEccnEAR99
Verlustleistung540mW