Single N-Channel 20 V 0.045 Ohm 22 nC HEXFET® Power Mosfet - MICRO-6
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Country of origin: THRoHS Compliantmosfets
Farnell(1/2)
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View PlansConfirmed Stock
344
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Best Unit Price
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Availability
1of 2 suppliers
Fastest delivery: 105 days
Stock by Supplier
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 344 | 105 days | — | Minimum order quantity 5 | — | In Stock | |
 | 0 | — | — | Minimum order quantity 3,000Order multiple 3,000 | REEL | No Stock |
Supplier Part Details
| Supplier | Description | RoHS | Life Cycle | SVHC | Category | Country | Weight | Tariff Code | Packaging | Links |
|---|---|---|---|---|---|---|---|---|---|---|
Farnell 2577180 | INFINEON - IRLMS2002TRPBF - Leistungs-MOSFET, n-Kanal, 20 V, 6.5 A, 0.03 ohm, SOT-23, Oberflächenmontage | Yes | Obsolete | No SVHC (21-Jan-2025) | — | TH | — | 85412900 (EU CN) | — | |
Future Electronics IRLMS2002TRPBF | Single N-Channel 20 V 0.045 Ohm 22 nC HEXFET® Power Mosfet - MICRO-6 | Yes | Active | — | mosfets | — | 0.073333 g | — | REEL |
Technical Attributes
Anzahl der Pins6Pin(s)
Bauform - TransistorSOT-23
Betriebstemperatur, max.150°C
Dauer-Drainstrom Id6.5A
Drain-Source-Durchgangswiderstand0.03ohm
Drain-Source-Spannung Vds20V
euEccnNLR
Gate-Source-Schwellenspannung, max.1.2V
hazardousfalse
isCanonicalY
Kanaltypn-Kanal
MSLMSL 1 - unbegrenzt
productTraceabilityYes-Date/Lot Code
ProduktpaletteHEXFET
Qualifikation-
Rds(on)-Prüfspannung4.5V
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
usEccnEAR99
Verlustleistung2W