Pre-Biased Bipolar Transistor (BJT) 50V 30mA 200mW Surface Mount SOT-363
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Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantDigital Transistors
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540
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 540 | — | — | Minimum order quantity 10Order multiple 10 | Tape & Reel (TR) | In Stock |
Supplier Part Details
Technical Attributes
Collector - Emitter Voltage VCEO50V
Current - Collector Cutoff0.5uA
Current - Collector(Ic)30mA
DC Current Gain100
Emitter-Base Voltage VEBO5V
Input Resistor47kΩ
Input Voltage (VI(on)@Ic,Vce)1.9V@2mA,0.3V
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@5mA,0.25mA
Pd - Power Dissipation200mW
Resistor Ratio1
Transition frequency(fT)250MHz
typeNPN+PNP
Vce Saturation(VCE(sat))-
Voltage - Input(Max)(VI(off))500mV@100uA,5V