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Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole TO-126-3

Lifecycle: Obsolete Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: CNRoHS Compliant
BD13910S
Farnell(1/3)

Supply Risk Summary

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Multi-source
Obsolete

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Confirmed Stock
9,980
3 of 4 suppliers stocked
Best Unit Price
—
Availability
3of 4 suppliers
Shortest factory lead: 20 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Winsource
Winsource
8,200——
Minimum order quantity 465
BulkIn Stock
Digi-Key
Digi-Key
1,694—20 weeks
Minimum order quantity 1Order multiple 2,000
BulkIn Stock
Mouser
Mouser
86——
Minimum order quantity 1Order multiple 2,000
BulkIn Stock
Farnell
Farnell
0154 days—
Minimum order quantity 2,000
—No Stock

Supplier Part Details

Supplier DescriptionRoHSLife CycleSVHCCategoryCountryWeightTariff CodePackagingLinks
Digi-Key
Digi-Key
BD13910S-ND
Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole TO-126-3—Obsolete—Discrete Semiconductor Products——8541.29.0055 (US HTS)Bulk
Farnell
Farnell
3615289
ONSEMI - BD13910S - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 1.5 A, 12.5 W, TO-126, DurchsteckmontageYesObsoleteNo SVHC (15-Jan-2018)—CN—85412900 (EU CN)—
Winsource
Winsource
BD13910S
TRANS NPN 80V 1.5A TO-126Yes——————Bulk
Mouser
Mouser
512-BD13910S
Bipolar Transistors - BJT NPN Epitaxial SilYesEOL—Bipolar Transistors - BJT—0.000761 g8541290000Bulk

Technical Attributes

Anzahl der Pins3Pin(s)
Bauform - TransistorTO-126
Betriebstemperatur, max.150°C
Dauerkollektorstrom1.5A
euEccnNLR
hazardousfalse
isCanonicalY
Kollektor-Emitter-Spannung, max.80V
productTraceabilityYes-Date/Lot Code
Produktpalette-
Qualifikation-
rohsPhthalatesCompliantYES
TransistormontageDurchsteckmontage
Übergangsfrequenz-
usEccnEAR99
Verlustleistung12.5W
WandlerpolaritätNPN