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Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube

Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Country of origin: INRoHS Compliant
BD139-10
Farnell(1/7)

Supply Risk Summary

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Confirmed Stock
37,278

Availability is incomplete; unknown stock and unidentified marketplace inventory are excluded.

6 of 6 suppliers stocked
Best Unit Price
—
Availability
6of 6 suppliers
Fastest delivery: 119 days
Shortest factory lead: 20 weeks

Stock by Supplier

Stock & Availability

Supplier Supplier Part Number Stock DeliveryFactory LeadMOQPackagingStatus
Mouser
Mouser
13,393—20 weeks
Minimum order quantity 1Order multiple 6,000
TubeIn Stock
MyArrow
MyArrow
Verical
Verical
Arrow USA
Arrow USA
11,330
—
—
—
—
—
20 weeks
Minimum order quantity 1Order multiple 50
Minimum order quantity 55
Minimum order quantity 6,000
TUBEIn Stock
Winsource
Winsource
8,620——
Minimum order quantity 215
—In Stock
Future Electronics
Future Electronics
3,050—20 weeks
Minimum order quantity 250Order multiple 50
TUBEIn Stock
TME
TME
511——
Minimum order quantity 1
TB1In Stock
Farnell
Farnell
374119 days—
Minimum order quantity 5
—In Stock

Supplier Part Details

Supplier DescriptionRoHSLife CycleSVHCCategoryCountryWeightTariff CodePackagingLinks
Farnell
Farnell
1084507
STMICROELECTRONICS - BD139-10 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 1.5 A, 1.25 W, SOT-32, DurchsteckmontageYesActiveNo SVHC (25-Jun-2025)—IN—85412900 (EU CN)—
Winsource
Winsource
BD139-10
TRANS NPN 80V 1.5A SOT32Yes———————
Arrow USA
Arrow USA
BD139-10
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 TubeYesActive—GP BJT————
Verical
Verical
BD139-10
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 TubeYesActive—GP BJT————
Mouser
Mouser
511-BD139-10
Bipolar Transistors - BJT NPN Silicon TrnsistrYes——Bipolar Transistors - BJT—0.00006 g8541290000Tube
TME
TME
BD139-10
Transistor: NPN; bipolar; 80V; 1,5A; 12,5W; SOT32———NPN THT-Transistoren———TB1
Future Electronics
Future Electronics
BD139-10
BD139 Series 80 V 3 mA Through Hole NPN Epitaxial Transistor - SOT-32YesActive—bipolar transistors—1.36 g—TUBE
MyArrow
MyArrow
BD139-10
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 TubeNoActive—SP1IN——TUBE

Technical Attributes

Anzahl der Pins3Pin(s)
Bauform - TransistorSOT-32
Betriebstemperatur, max.150°C
Dauerkollektorstrom1.5A
DC-Stromverstärkung (hFE), min.40hFE
euEccnNLR
hazardousfalse
isCanonicalY
Kollektor-Emitter-Spannung, max.80V
MSL-
productTraceabilityNo
Produktpalette-
Qualifikation-
rohsPhthalatesCompliantYES
TransistormontageDurchsteckmontage
Übergangsfrequenz-
usEccnEAR99
Verlustleistung1.25W
WandlerpolaritätNPN