NEXPERIA - 2N7002KQBZ - Leistungs-MOSFET, n-Kanal, 60 V, 720 mA, 0.85 ohm, DFN1110D, Oberflächenmontage
Lifecycle: Active Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (Farnell)
Country of origin: CNRoHS CompliantN-Kanal-Transistoren SMD
Farnell
Supply Risk Summary
Supply chain risk trend is available on Pro and Enterprise plans.
No supply
Active
Sign in to view detailed supply risk factors and indicators.
View PlansConfirmed Stock
0
Not in stock
Best Unit Price
—
Availability
0of 5 suppliers
No lead time data
Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 2N7002KQBZ | 0 | 218 days | — | Minimum order quantity 5,000Order multiple 5,000 | — | No Stock |
 | 0 | 378 days | — | Minimum order quantity 5 | — | No Stock | |
| 0 | 378 days | — | Minimum order quantity 100 | — | No Stock | |
| 0 | 378 days | — | Minimum order quantity 5,000 | — | No Stock | |
 | 0 | — | — | Minimum order quantity 1 | — | No Stock |
Supplier Part Details
| Supplier | Description | RoHS | Life Cycle | SVHC | Category | Country | Tariff Code | Links |
|---|---|---|---|---|---|---|---|---|
Farnell 3868823 | NEXPERIA - 2N7002KQBZ - Leistungs-MOSFET, n-Kanal, 60 V, 720 mA, 0.85 ohm, DFN1110D, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | — | CN | 85412100 (EU CN) | |
Farnell 3868823RL | NEXPERIA - 2N7002KQBZ - Leistungs-MOSFET, n-Kanal, 60 V, 720 mA, 0.85 ohm, DFN1110D, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | — | CN | 85412100 (EU CN) | |
Farnell 4319579 | NEXPERIA - 2N7002KQBZ - Leistungs-MOSFET, n-Kanal, 60 V, 720 mA, 0.85 ohm, DFN1110D, Oberflächenmontage | Yes | Active | No SVHC (25-Jun-2025) | — | CN | 85412900 (EU CN) | |
TME 2N7002KQBZ | Transistor: N-MOSFET; Trench; unipolar; 60V; 720mA; Idm: 2,9A; 420mW | — | Hardly Available | — | N-Kanal-Transistoren SMD | — | — | |
Avnet Silica 2N7002KQBZ | 2N7002KQB/SOT8015/DFN1110D-3 /12NC934662647147 | Yes | — | — | — | — | — |
Technical Attributes
Anzahl der Pins3Pin(s)
Bauform - TransistorDFN1110D
Betriebstemperatur, max.150°C
Dauer-Drainstrom Id720mA
Drain-Source-Durchgangswiderstand0.85ohm
Drain-Source-Spannung Vds60V
euEccnNLR
Gate-Source-Schwellenspannung, max.1.7V
hazardousfalse
isCanonicalY
Kanaltypn-Kanal
MSL-
productTraceabilityYes-Date/Lot Code
ProduktpaletteTrench Series
QualifikationAEC-Q101
Rds(on)-Prüfspannung10V
rohsPhthalatesCompliantYES
TransistormontageOberflächenmontage
usEccnEAR99
Verlustleistung960mW