Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 625mW Through Hole TO-92
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantBipolar (BJT)
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6,950
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| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 6,950 | — | — | Minimum order quantity 50Order multiple 50 | Bag-packed | In Stock |
Supplier Part Details
Technical Attributes
Collector - Emitter Voltage VCEO40V
Configuration-
Current - Collector Cutoff10nA
Current - Collector(Ic)600mA
DC Current Gain300
Emitter-Base Voltage VEBO5V
Number1 PNP
Operating Temperature-55℃~+150℃
Pd - Power Dissipation625mW
Transition frequency(fT)200MHz
typePNP
Vce Saturation(VCE(sat))670mV