Toshiba N-Kanal, SMD MOSFET 100 V / 93 A 78 W, 8-Pin SOP
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Technical Attributes
Channel-ModusEnhancement
Channel-TypN
Dauer-Drainstrom max.93 A
Drain-Source-Spannung max.100 V
Drain-Source-Widerstand max.4,5 mΩ
Gate-Schwellenspannung max.4V
Gate-Schwellenspannung min.2V
Gate-Source Spannung max.±20 V
GehäusegrößeSOP
Höhe0.95mm
Länge5mm
Montage-TypSMD
Pinanzahl8
Transistor-KonfigurationEinfach
Verlustleistung max.78 W