600mA 600mΩ@4.5V 400mW 1V 2 P-Channel DFN1010-6L FET, MOSFET Arrays RoHS
Supply Risk Score and Supply Risk Trend are available on Pro and Enterprise. Watchlist (Pro)
Datasheets:Datasheet (LCSC)
Country of origin: —RoHS CompliantMOSFETs
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Stock & Availability
| Supplier | Supplier Part Number | Stock | Delivery | Factory Lead | MOQ | Packaging | Status |
|---|---|---|---|---|---|---|---|
 | 0 | — | — | Minimum order quantity 1Order multiple 5,000 | Tape & Reel (TR) | No Stock |
Supplier Part Details
Technical Attributes
Current - Continuous Drain(Id)600mA
Drain to Source Voltage20V
Gate Charge(Qg)1.1nC@4.5V
Gate Threshold Voltage (Vgs(th))1V
Input Capacitance(Ciss)51pF
Number2 P-Channel
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)15pF
Pd - Power Dissipation400mW
RDS(on)600mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)2.2pF
TypeP-Channel